Scrutiny of the dynamics of quantum dot semiconductor lasers

Authors

  • M. O. Oleiwi Department of Physics, College of Science, University of Thi-Qar
  • A.M.Chekheim Directorate of Education , Thi-Qar Province
  • H. A. Sultan Department of Physics, College of Education for Pure Sciences, University of Basrah , Iraq
  • C. A. Emshary Department of Physics, College of Education for Pure Sciences, University of Basrah , Iraq

Keywords:

Quantum dot semiconductor laser, Ground state, Excited state.

Abstract

The present paper introduces  a numerical simulation results of the study from semiconductor quantum dot laser via the solution of four- equations model that describe temporal variations of carrier numbers in the wetting layer, , in the two- fold degenerate ground state, , and in the four- fold degenerate excited state, , and the number of photons, S, emitted from the GS. Varieties of dynamics have been seen to occur as a result of the variation of the parameters that appeare in the above mentioned model.

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Published

2019-04-22

How to Cite

M. O. Oleiwi, A.M.Chekheim, H. A. Sultan, & C. A. Emshary. (2019). Scrutiny of the dynamics of quantum dot semiconductor lasers. University of Thi-Qar Journal, 12(2), 8–22. Retrieved from https://jutq.utq.edu.iq/index.php/main/article/view/87

Issue

Vol. 12 No. 2 (2017)

Section

Articles